Lei Li, S. Reyes, M. J. Asadi, D. Jena, H. Xing, P. Fay, J. Hwang
{"title":"d波段超低损耗SiC衬底集成波导的单扫与带特性研究","authors":"Lei Li, S. Reyes, M. J. Asadi, D. Jena, H. Xing, P. Fay, J. Hwang","doi":"10.1109/arftg54656.2022.9896408","DOIUrl":null,"url":null,"abstract":"A D-band (110-170GHz)SiC substrate-integrated waveguide (SIW) is characterized on-wafer by two different vector network analyzers (VNAs): a 220-GHz single-sweep VNA and an 110-GHz VNA with WR8 (90-140GHz) and WR5 (140-220GHz) frequency extenders. To facilitate probing, the SIW input and output are transitioned to grounded coplanar waveguides (GCPWs). Two-tier calibration is used to de-embed the SIW-GCPW transitions as well as to extract the intrinsic SIW characteristics. In general, the two VNAs are in agreement and both result in an ultra-low insertion loss of approximately 0.2 dB/mm for the same SIW, despite stitching errors at band edges.","PeriodicalId":375242,"journal":{"name":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","volume":"234 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Single-Sweep vs. Banded Characterizations of a D-band Ultra-Low-Loss SiC Substrate-Integrated Waveguide\",\"authors\":\"Lei Li, S. Reyes, M. J. Asadi, D. Jena, H. Xing, P. Fay, J. Hwang\",\"doi\":\"10.1109/arftg54656.2022.9896408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A D-band (110-170GHz)SiC substrate-integrated waveguide (SIW) is characterized on-wafer by two different vector network analyzers (VNAs): a 220-GHz single-sweep VNA and an 110-GHz VNA with WR8 (90-140GHz) and WR5 (140-220GHz) frequency extenders. To facilitate probing, the SIW input and output are transitioned to grounded coplanar waveguides (GCPWs). Two-tier calibration is used to de-embed the SIW-GCPW transitions as well as to extract the intrinsic SIW characteristics. In general, the two VNAs are in agreement and both result in an ultra-low insertion loss of approximately 0.2 dB/mm for the same SIW, despite stitching errors at band edges.\",\"PeriodicalId\":375242,\"journal\":{\"name\":\"2022 99th ARFTG Microwave Measurement Conference (ARFTG)\",\"volume\":\"234 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 99th ARFTG Microwave Measurement Conference (ARFTG)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/arftg54656.2022.9896408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 99th ARFTG Microwave Measurement Conference (ARFTG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/arftg54656.2022.9896408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single-Sweep vs. Banded Characterizations of a D-band Ultra-Low-Loss SiC Substrate-Integrated Waveguide
A D-band (110-170GHz)SiC substrate-integrated waveguide (SIW) is characterized on-wafer by two different vector network analyzers (VNAs): a 220-GHz single-sweep VNA and an 110-GHz VNA with WR8 (90-140GHz) and WR5 (140-220GHz) frequency extenders. To facilitate probing, the SIW input and output are transitioned to grounded coplanar waveguides (GCPWs). Two-tier calibration is used to de-embed the SIW-GCPW transitions as well as to extract the intrinsic SIW characteristics. In general, the two VNAs are in agreement and both result in an ultra-low insertion loss of approximately 0.2 dB/mm for the same SIW, despite stitching errors at band edges.
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