CdS单晶蚀刻敏化性质的研究

December 1, 1967 Pub Date : 1967-12-31 DOI:10.1002/PSSB.19670240217

M. Sheĭnkman, V. A. Tyagai, O. V. Snitko, I. Ermolovich, G. Belenky, V. Nbondakenko

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引用次数: 6

摘要

采用多种光电和发光方法研究了CdS单晶在KOH (NaOH)溶液中蚀刻的敏化过程。结果表明，敏化主要是由于复合的慢敏化r中心的产生，其参数与天然光导晶体中的复合中心相同。提出了两种机制来解释敏化，这些机制考虑了空位配合物和羟基的扩散。[忽略俄语文本]。

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Studies on the Nature of CdS Single Crystal Sensitization by Etching

The sensitizing of CdS single crystals by etching in a KOH (NaOH) solution is investigated by several photoelectric and luminescence methods. It is shown that the sensitizing is mainly due to the creation of slow sensitizing r-centres of recombination with parameters identical to those of recombination centres in naturally photoconductive crystals. Two mechanisms are proposed to explain the sensitizing and these take into account the dif-fusion of vacancy complexes and hydroxyle groups. [Russian Text Ignored].

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来源期刊

December 1, 1967

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