小型化硅基元件局部强度测量技术

M. Deluca, R. Bermejo, M. Pletz, M. Morianz, J. Stahr, P. Supancic, R. Danzer
{"title":"小型化硅基元件局部强度测量技术","authors":"M. Deluca, R. Bermejo, M. Pletz, M. Morianz, J. Stahr, P. Supancic, R. Danzer","doi":"10.1109/ESIME.2011.5765812","DOIUrl":null,"url":null,"abstract":"The ongoing trend to further miniaturise electronic devices in Printed Circuit Board (PCB) technologies has pointed out the embedding of components as a principal design strategy. The reliability of the PCB relies on the functionality of the embedded components as well as on their structural integrity in order to survive the embedding process. In the present work, the biaxial strength of metallised silicon chips used in PCB technologies has been tested on both the substrate and the metallised side, evidencing a significant influence of the metallic contacts on the strength and the mechanical reliability of the component. Specimens tested with the metallised side under tension underwent an early failure (lower fracture load), whereby a statistical analysis of the strength distribution evidenced the presence of a narrower critical defect size distribution (i.e. higher mechanical reliability). This phenomenon was explained by means of (i) finite elements (FE) simulations of the loading conditions, and (ii) Focussed Ion Beam (FIB) analyses of the metal-silicon interface. It was concluded that the presence of a stress concentration in the interfacial area during loading induces pre-cracks which can act as critical defects upon load enhancement, thus causing failure for a very well defined range of loads.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Local strength measurement technique for miniaturised silicon-based components\",\"authors\":\"M. Deluca, R. Bermejo, M. Pletz, M. Morianz, J. Stahr, P. Supancic, R. Danzer\",\"doi\":\"10.1109/ESIME.2011.5765812\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ongoing trend to further miniaturise electronic devices in Printed Circuit Board (PCB) technologies has pointed out the embedding of components as a principal design strategy. The reliability of the PCB relies on the functionality of the embedded components as well as on their structural integrity in order to survive the embedding process. In the present work, the biaxial strength of metallised silicon chips used in PCB technologies has been tested on both the substrate and the metallised side, evidencing a significant influence of the metallic contacts on the strength and the mechanical reliability of the component. Specimens tested with the metallised side under tension underwent an early failure (lower fracture load), whereby a statistical analysis of the strength distribution evidenced the presence of a narrower critical defect size distribution (i.e. higher mechanical reliability). This phenomenon was explained by means of (i) finite elements (FE) simulations of the loading conditions, and (ii) Focussed Ion Beam (FIB) analyses of the metal-silicon interface. It was concluded that the presence of a stress concentration in the interfacial area during loading induces pre-cracks which can act as critical defects upon load enhancement, thus causing failure for a very well defined range of loads.\",\"PeriodicalId\":115489,\"journal\":{\"name\":\"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2011.5765812\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESIME.2011.5765812","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

在印刷电路板(PCB)技术中,电子器件进一步小型化的趋势指出,嵌入元件是一种主要的设计策略。PCB的可靠性依赖于嵌入组件的功能以及它们的结构完整性,以便在嵌入过程中幸存下来。在目前的工作中,在PCB技术中使用的金属化硅芯片的双轴强度已经在基板和金属化侧进行了测试,证明金属接触对组件的强度和机械可靠性有重大影响。在拉伸下,金属化侧的试样经历了早期的破坏(较低的断裂载荷),因此强度分布的统计分析证明了存在更窄的临界缺陷尺寸分布(即更高的机械可靠性)。这一现象通过(i)加载条件的有限元(FE)模拟和(ii)金属硅界面的聚焦离子束(FIB)分析来解释。由此得出结论,加载过程中界面区域应力集中的存在导致了预裂纹,而预裂纹在加载增强时可以作为关键缺陷,从而导致在一个非常明确的载荷范围内失效。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Local strength measurement technique for miniaturised silicon-based components
The ongoing trend to further miniaturise electronic devices in Printed Circuit Board (PCB) technologies has pointed out the embedding of components as a principal design strategy. The reliability of the PCB relies on the functionality of the embedded components as well as on their structural integrity in order to survive the embedding process. In the present work, the biaxial strength of metallised silicon chips used in PCB technologies has been tested on both the substrate and the metallised side, evidencing a significant influence of the metallic contacts on the strength and the mechanical reliability of the component. Specimens tested with the metallised side under tension underwent an early failure (lower fracture load), whereby a statistical analysis of the strength distribution evidenced the presence of a narrower critical defect size distribution (i.e. higher mechanical reliability). This phenomenon was explained by means of (i) finite elements (FE) simulations of the loading conditions, and (ii) Focussed Ion Beam (FIB) analyses of the metal-silicon interface. It was concluded that the presence of a stress concentration in the interfacial area during loading induces pre-cracks which can act as critical defects upon load enhancement, thus causing failure for a very well defined range of loads.
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