InP模板与Si衬底结合制备薄膜激光器用ingaasp - MQW层

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528823

T. Fujii, K. Takeda, Erina Kanno, H. Nishi, K. Hasebe, Tsuyoshi Yamamoto, T. Kakitsuka, S. Matsuo

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引用次数: 1

摘要

我们展示了高质量InGaAsP-MQWs在直接连接到SiO2/Si衬底(InP模板)的InP膜上的MOVPE生长。PL, XRD和AFM测试证实了外延层的高晶体质量。此外，我们还利用这种生长方法制备了薄膜型DR激光器。我们首次演示了使用在InP模板上生长的mqw制造的激光器的连续波操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers

We demonstrate the MOVPE growth of a high-quality InGaAsP-MQWs on an InP membrane directly bonded to a SiO2/Si substrate (InP template). PL, XRD and AFM measurements confirmed the high crystal quality of the epitaxial layers. Moreover, we fabricated a membrane DR laser using this growth method. We achieved the first demonstration of the continuous wave operation of a laser fabricated by using MQWs grown on an InP template.

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来源期刊

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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