{"title":"基于SCAPS-1D的高效ZnO/Cu2O/CdS/CdTe太阳能电池的仿真与优化","authors":"M. M. Hossain, N. Jahan, Rayhan Ul Hossain","doi":"10.1109/icaeee54957.2022.9836410","DOIUrl":null,"url":null,"abstract":"A CdTe-based thin-film solar cell has been designed and analyzed using SCAPS-1D simulator. The proposed solar cell consists of a transparent conductive oxide (ZnO), an n-doped Cu2O, n-type cadmium sulphide (CdS), and p-type cadmium telluride (CdTe) layer. To achieve the maximum possible power conversion efficiency (PCE), the layer thickness, doping profile, and defect density of the absorber layer have been optimized. A back surface field (BSF) layer (p++ CdTe) is also incorporated to reduce the carrier recombination at the back electrode. The optimized cell has an open circuit voltage of 0.8858V, a short circuit current of 61.2699 mA/cm2, a fill factor of 69.75%, and a PCE of 37.86% considering AM 1.5 illuminations.","PeriodicalId":383872,"journal":{"name":"2022 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Simulation and optimization of a highly efficient ZnO/Cu2O/CdS/CdTe solar cell using SCAPS-1D\",\"authors\":\"M. M. Hossain, N. Jahan, Rayhan Ul Hossain\",\"doi\":\"10.1109/icaeee54957.2022.9836410\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CdTe-based thin-film solar cell has been designed and analyzed using SCAPS-1D simulator. The proposed solar cell consists of a transparent conductive oxide (ZnO), an n-doped Cu2O, n-type cadmium sulphide (CdS), and p-type cadmium telluride (CdTe) layer. To achieve the maximum possible power conversion efficiency (PCE), the layer thickness, doping profile, and defect density of the absorber layer have been optimized. A back surface field (BSF) layer (p++ CdTe) is also incorporated to reduce the carrier recombination at the back electrode. The optimized cell has an open circuit voltage of 0.8858V, a short circuit current of 61.2699 mA/cm2, a fill factor of 69.75%, and a PCE of 37.86% considering AM 1.5 illuminations.\",\"PeriodicalId\":383872,\"journal\":{\"name\":\"2022 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-02-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/icaeee54957.2022.9836410\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icaeee54957.2022.9836410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation and optimization of a highly efficient ZnO/Cu2O/CdS/CdTe solar cell using SCAPS-1D
A CdTe-based thin-film solar cell has been designed and analyzed using SCAPS-1D simulator. The proposed solar cell consists of a transparent conductive oxide (ZnO), an n-doped Cu2O, n-type cadmium sulphide (CdS), and p-type cadmium telluride (CdTe) layer. To achieve the maximum possible power conversion efficiency (PCE), the layer thickness, doping profile, and defect density of the absorber layer have been optimized. A back surface field (BSF) layer (p++ CdTe) is also incorporated to reduce the carrier recombination at the back electrode. The optimized cell has an open circuit voltage of 0.8858V, a short circuit current of 61.2699 mA/cm2, a fill factor of 69.75%, and a PCE of 37.86% considering AM 1.5 illuminations.
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