{"title":"金属电极与低温生长砷化镓电接触对太赫兹波探测光导天线信号和噪声的影响(会议报告)","authors":"Y. Kadoya","doi":"10.1117/12.2557652","DOIUrl":null,"url":null,"abstract":"We present our systematic experimental study on the responsivity to THz wave and the noise in the photoconductive antennas made on low-temperature-grown (LTG) GaAs. In particular, we show that both depend on the properties of the LTG GaAs and the type of the metallization. On the basis of the results, we will discuss a device model in a manner independent of the details of the device fabrication to facilitate the standardized description.","PeriodicalId":170578,"journal":{"name":"Next-Generation Spectroscopic Technologies XIII","volume":"123 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of electrical contact between electrode metal and low-temperature-grown GaAs on the signal and noise of photoconductive antennas for THz wave detection (Conference Presentation)\",\"authors\":\"Y. Kadoya\",\"doi\":\"10.1117/12.2557652\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present our systematic experimental study on the responsivity to THz wave and the noise in the photoconductive antennas made on low-temperature-grown (LTG) GaAs. In particular, we show that both depend on the properties of the LTG GaAs and the type of the metallization. On the basis of the results, we will discuss a device model in a manner independent of the details of the device fabrication to facilitate the standardized description.\",\"PeriodicalId\":170578,\"journal\":{\"name\":\"Next-Generation Spectroscopic Technologies XIII\",\"volume\":\"123 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Next-Generation Spectroscopic Technologies XIII\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2557652\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Next-Generation Spectroscopic Technologies XIII","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2557652","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impact of electrical contact between electrode metal and low-temperature-grown GaAs on the signal and noise of photoconductive antennas for THz wave detection (Conference Presentation)
We present our systematic experimental study on the responsivity to THz wave and the noise in the photoconductive antennas made on low-temperature-grown (LTG) GaAs. In particular, we show that both depend on the properties of the LTG GaAs and the type of the metallization. On the basis of the results, we will discuss a device model in a manner independent of the details of the device fabrication to facilitate the standardized description.
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