模板辅助下铟酸钠在W上的选择性外延

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/csw55288.2022.9930423

J. Svensson, P. Olausson, H. Menon, E. Lind, M. Borg

{"title":"模板辅助下铟酸钠在W上的选择性外延","authors":"J. Svensson, P. Olausson, H. Menon, E. Lind, M. Borg","doi":"10.1109/csw55288.2022.9930423","DOIUrl":null,"url":null,"abstract":"Results on integration of InAs on W films through template assisted selective epitaxy are presented. The InAs crystals are analysed using SEM, electron beam backscattering and in-situ electrical measurements. A high yield of single crystalline InAs can be obtained for certain template diameters and pitches which demonstrates that this is a viable route to integrate III-V semiconductors in the back-end-of-line of CMOS circuits for added functionality.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Template-Assisted Selective Epitaxy of InAs on W\",\"authors\":\"J. Svensson, P. Olausson, H. Menon, E. Lind, M. Borg\",\"doi\":\"10.1109/csw55288.2022.9930423\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Results on integration of InAs on W films through template assisted selective epitaxy are presented. The InAs crystals are analysed using SEM, electron beam backscattering and in-situ electrical measurements. A high yield of single crystalline InAs can be obtained for certain template diameters and pitches which demonstrates that this is a viable route to integrate III-V semiconductors in the back-end-of-line of CMOS circuits for added functionality.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/csw55288.2022.9930423\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/csw55288.2022.9930423","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

介绍了模板辅助选择性外延技术在W薄膜上集成InAs的研究结果。利用扫描电镜、电子束后向散射和原位电测量对InAs晶体进行了分析。对于特定直径和节距的模板，可以获得高产量的单晶InAs，这表明这是将III-V半导体集成到CMOS电路后端以增加功能的可行途径。

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Template-Assisted Selective Epitaxy of InAs on W

Results on integration of InAs on W films through template assisted selective epitaxy are presented. The InAs crystals are analysed using SEM, electron beam backscattering and in-situ electrical measurements. A high yield of single crystalline InAs can be obtained for certain template diameters and pitches which demonstrates that this is a viable route to integrate III-V semiconductors in the back-end-of-line of CMOS circuits for added functionality.

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2022 Compound Semiconductor Week (CSW)

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