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引用次数: 0
摘要
本文的目的是在选定的目标应用电路中对新的1200v GaN功率晶体管技术进行评价。作为评估电路，我们选择了双交错拓扑的三相PFC。从而实现了商用1200v GaN结构的识别。选定晶体管在PFC电路中实现并进行了评估。在标称工作参数下的测试表明，由于在开发阶段错过了优化和测试，所开发的1200 V GaN功率晶体管在工业应用中缺乏可靠的性能。因此，得出的结论是，1200 V GaN技术仍然需要额外的研究和开发时间才能成功地与强大的SiC晶体管结构竞争。
Evaluation of high-voltage GAN transistor in 3-phase PFC circuit
The aim of this paper is evaluation of new 1200 V GaN power transistor technology within selected target application circuit. As a evaluating circuit, 3-phase PFC in dual interleaved topology was selected. Consequently, identification of commercially available 1200 V GaN structure was realized. Selected transistor was implemented withing PFC circuit and evaluated. Testing under nominal operational parameters revealed that developed 1200 V GaN power transistor has lack of performance to reliably operate at industrial application due to missed optimization and testing during development phase. Asa a result it was concluded that 1200 V GaN technology still requires additional research and development time to successfully compete robust SiC transistor structures.
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