两种不同外延树脂制备工艺制备InP衬底的老化行为

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328179

P. Regreny, G. Jacob, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, T. Benyattou

{"title":"两种不同外延树脂制备工艺制备InP衬底的老化行为","authors":"P. Regreny, G. Jacob, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, T. Benyattou","doi":"10.1109/ICIPRM.1994.328179","DOIUrl":null,"url":null,"abstract":"In this work we investigate the aging behavior of InP substrates prepared with 2 different epi-ready processes based on \"thin\" 4-5 /spl Aring/ and \"thick\" 7-8 /spl Aring/ oxide layers. The oxide layers are characterized by X-ray photoelectron spectroscopy (XPS) after storage in both air and nitrogen. While there is no variation of the oxide thickness when substrates are stored under nitrogen, for a \"thin\" 4-5 /spl Aring/ oxide layer stored in air, the oxide thickness increases with time. However the photoluminescence behavior of MBE grown InAs/AlInAs quantum wells localised near the interface and SIMS profiles show no aging effect after 6 months if an optimized oxide desorption procedure (In stabilization of the surface) is used.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Aging behavior of InP substrates prepared with 2 different epi-ready processes\",\"authors\":\"P. Regreny, G. Jacob, M. Gendry, G. Hollinger, M. Gauneau, D. Lecrosnier, T. Benyattou\",\"doi\":\"10.1109/ICIPRM.1994.328179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we investigate the aging behavior of InP substrates prepared with 2 different epi-ready processes based on \\\"thin\\\" 4-5 /spl Aring/ and \\\"thick\\\" 7-8 /spl Aring/ oxide layers. The oxide layers are characterized by X-ray photoelectron spectroscopy (XPS) after storage in both air and nitrogen. While there is no variation of the oxide thickness when substrates are stored under nitrogen, for a \\\"thin\\\" 4-5 /spl Aring/ oxide layer stored in air, the oxide thickness increases with time. However the photoluminescence behavior of MBE grown InAs/AlInAs quantum wells localised near the interface and SIMS profiles show no aging effect after 6 months if an optimized oxide desorption procedure (In stabilization of the surface) is used.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328179\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，我们研究了基于“薄”4-5 /spl氧化层和“厚”7-8 /spl氧化层的两种不同外延制备工艺制备的InP衬底的老化行为。在空气和氮气中储存后，用x射线光电子能谱(XPS)对氧化层进行了表征。当衬底在氮气下储存时，氧化物厚度没有变化，而对于储存在空气中的“薄”4-5 /spl的氧化层，氧化物厚度随着时间的推移而增加。然而，如果使用优化的氧化物解吸程序(表面稳定)，在6个月后，位于界面附近的MBE生长的InAs/AlInAs量子阱的光致发光行为和SIMS曲线显示没有老化效应

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Aging behavior of InP substrates prepared with 2 different epi-ready processes

In this work we investigate the aging behavior of InP substrates prepared with 2 different epi-ready processes based on "thin" 4-5 /spl Aring/ and "thick" 7-8 /spl Aring/ oxide layers. The oxide layers are characterized by X-ray photoelectron spectroscopy (XPS) after storage in both air and nitrogen. While there is no variation of the oxide thickness when substrates are stored under nitrogen, for a "thin" 4-5 /spl Aring/ oxide layer stored in air, the oxide thickness increases with time. However the photoluminescence behavior of MBE grown InAs/AlInAs quantum wells localised near the interface and SIMS profiles show no aging effect after 6 months if an optimized oxide desorption procedure (In stabilization of the surface) is used.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

自引率

0.00%

发文量