用于MWIR传感的Ge1-xSnx合金的生长

International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors Pub Date : 2023-01-31 DOI:10.1117/12.2647373

B. Claflin, G. Grzybowski, J. Duran

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引用次数: 0

摘要

采用等离子体增强化学气相沉积技术，在Ge、Si和Al2O3基底上生长出了Sn浓度大于10%、厚度大于1 μm的Ge1-xSnx薄膜。介绍了这些合金的结构、光学和电学性能的表征数据。平面光电导体和直接生长在Si衬底上的垂直pn器件的器件特性显示了未来MWIR传感应用的前景。

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Growth of Ge1-xSnx alloys for MWIR sensing applications

Films of Ge1-xSnx have been grown on Ge, Si, and Al2O3 substrates by remote plasmaenhanced chemical vapor deposition with Sn concentrations greater than 10% and thicknesses greater than 1 μm. Characterization data of the structural, optical, and electrical properties of these alloys are presented. Device characteristics from planar photoconductor and vertical p-n devices grown directly on Si substrates show promise for future MWIR sensing applications.

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International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors

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