功率二极管的开关瞬态

S. Eio, N. Shammas
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引用次数: 3

摘要

本文提出的工作目的是深入了解功率二极管的开关瞬态,反向恢复以及减少反向恢复时间的方法。本文还讨论了利用载流子寿命杀伤的局限性,例如在制造过程中掺杂金和铂,在金属化前和封装后进行高能辐照,以及最近一项将单片器件与低传导损耗和高开关能力相关联的研究
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Switching Transients of Power Diode
The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability
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