{"title":"功率二极管的开关瞬态","authors":"S. Eio, N. Shammas","doi":"10.1109/UPEC.2006.367541","DOIUrl":null,"url":null,"abstract":"The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability","PeriodicalId":184186,"journal":{"name":"Proceedings of the 41st International Universities Power Engineering Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Switching Transients of Power Diode\",\"authors\":\"S. Eio, N. Shammas\",\"doi\":\"10.1109/UPEC.2006.367541\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability\",\"PeriodicalId\":184186,\"journal\":{\"name\":\"Proceedings of the 41st International Universities Power Engineering Conference\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 41st International Universities Power Engineering Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UPEC.2006.367541\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 41st International Universities Power Engineering Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UPEC.2006.367541","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The aim of the work presented in this paper is to gain an insight in the switching transient of the power diode, reverse recovery, and methods of reducing the reverse recovery time. The limitations have also been discussed in using carrier lifetime killing such as by doping gold and platinum during the manufacturing process, high-energy irradiation before metallisation and after encapsulation, and a recent research to associate monolithically devices to obtain low conduction losses and high switching ability