O. Ahrens, Dennis Hohlfeld, A. Buhrdorf, O. Glitza, Josef Binder
{"title":"一类新型电容式微机械超声换能器","authors":"O. Ahrens, Dennis Hohlfeld, A. Buhrdorf, O. Glitza, Josef Binder","doi":"10.1109/ULTSYM.2000.922695","DOIUrl":null,"url":null,"abstract":"A new set-up of capacitive micromachined ultrasonic transducers (cMUT) will be described that recently have been successfully realized. This new transducer design utilizes a structured silicon oxide sacrificial layer as well as a highly doped and, therefore, conductive membrane of polycrystalline silicon. So far, cMUT have been produced with resonance frequencies in the range from 1 to 4 MHz. These devices have been applied to a displacement measurement in air.","PeriodicalId":350384,"journal":{"name":"2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)","volume":"224 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A new class of capacitive micromachined ultrasonic transducers\",\"authors\":\"O. Ahrens, Dennis Hohlfeld, A. Buhrdorf, O. Glitza, Josef Binder\",\"doi\":\"10.1109/ULTSYM.2000.922695\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new set-up of capacitive micromachined ultrasonic transducers (cMUT) will be described that recently have been successfully realized. This new transducer design utilizes a structured silicon oxide sacrificial layer as well as a highly doped and, therefore, conductive membrane of polycrystalline silicon. So far, cMUT have been produced with resonance frequencies in the range from 1 to 4 MHz. These devices have been applied to a displacement measurement in air.\",\"PeriodicalId\":350384,\"journal\":{\"name\":\"2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)\",\"volume\":\"224 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULTSYM.2000.922695\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULTSYM.2000.922695","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new class of capacitive micromachined ultrasonic transducers
A new set-up of capacitive micromachined ultrasonic transducers (cMUT) will be described that recently have been successfully realized. This new transducer design utilizes a structured silicon oxide sacrificial layer as well as a highly doped and, therefore, conductive membrane of polycrystalline silicon. So far, cMUT have been produced with resonance frequencies in the range from 1 to 4 MHz. These devices have been applied to a displacement measurement in air.