3D集成高性能系统的设计和技术解决方案

G. V. D. Plas, E. Beyne
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引用次数: 9

摘要

3D系统集成建立在tsv(5µm至100nm CD)的互连缩放路线图和D2W和W2W方案的细间距凸起/垫(到<1µm间距)上。硅桥连接小芯片的速度为9.5Gbp, 338fJ/b,而W2W细间距存储逻辑功能分区比2D提高了30%的功率/性能。撞击冷却器,BSPDN,高密度MIMCAP和集成磁将功率壁推至300W/cm2。另一方面,3D设计流程需要进一步发展。功能分区3D-SOC的工艺优化、DfT、KGD/S和异构技术优化使高性能系统具有成本效益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Technology Solutions for 3D Integrated High Performance Systems
3D system integration builds on interconnect scaling roadmaps of TSVs (5µm to 100nm CD) and fine pitch bumps/pads (to <1µm pitch) for D2W and W2W schemes. Si bridges connect chiplets at 9.5Gbp, 338fJ/b, while W2W fine pitch memory logic functional partitioning improves power/performance by 30% vs 2D. Impingement cooler, BSPDN, high density MIMCAP and integrated magnetics push the power wall to 300W/cm2. On the other hand, 3D design flows require further development. Process optimization, DfT, KGD/S and heterogeneous technology optimization of functionally partitioned 3D-SOC make high performance systems cost-effective.
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