{"title":"GaN纳米线的光学和电学性质与生长温度的关系","authors":"A. Talin, George T. Wang, E. Lai, R. Anderson","doi":"10.1109/ISAF.2008.4693793","DOIUrl":null,"url":null,"abstract":"The optical and electrical transport of GaN nanowires grown by metal catalyzed metal organic chemical vapor deposition was investigated as a function of substrate temperature during growth. As the growth temperature increased from 800°C to 900°C the electrical conduction mechanism changed from space charge limited to ohmic transport , the nanowire resistivity dropped from ~107 ohm-cm to ~10¿3 ohm-cm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The dependence of optical and electrical properties of GaN nanowires on the growth temperature Paper #NA003\",\"authors\":\"A. Talin, George T. Wang, E. Lai, R. Anderson\",\"doi\":\"10.1109/ISAF.2008.4693793\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The optical and electrical transport of GaN nanowires grown by metal catalyzed metal organic chemical vapor deposition was investigated as a function of substrate temperature during growth. As the growth temperature increased from 800°C to 900°C the electrical conduction mechanism changed from space charge limited to ohmic transport , the nanowire resistivity dropped from ~107 ohm-cm to ~10¿3 ohm-cm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed.\",\"PeriodicalId\":228914,\"journal\":{\"name\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 17th IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2008.4693793\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2008.4693793","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The dependence of optical and electrical properties of GaN nanowires on the growth temperature Paper #NA003
The optical and electrical transport of GaN nanowires grown by metal catalyzed metal organic chemical vapor deposition was investigated as a function of substrate temperature during growth. As the growth temperature increased from 800°C to 900°C the electrical conduction mechanism changed from space charge limited to ohmic transport , the nanowire resistivity dropped from ~107 ohm-cm to ~10¿3 ohm-cm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
