用引导状态统计挑战片上SRAM安全性

Joseph McMahan, Weilong Cui, Liangzhao Xia, Jeff Heckey, F. Chong, T. Sherwood
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引用次数: 3

摘要

片上存储器被大多数安全系统设计者视为安全的存储器空间,除了最老练的攻击者之外,所有人都看不到它。一旦覆盖了某个值或删除了权限,则假定存储在其中的数据完全停止持久存储。然而,随着写操作的进行,比特单元逐渐磨损;如果以不对称的方式写入数据(重复写入相同的数据),则存储的信息稍后可以仅通过对单元启动状态的统计测量来部分重建。我们提出了一种测量存储系统对这种磨损泄漏的脆弱性的技术,将其建模为从噪声信道中恢复比特的过程。我们在一个130nm的SRAM设备上展示了我们的技术,并证明如果不使用对策,一个非常简单的预测模型能够正确地重建27%的写入密钥位-足以重建RSA密钥的概率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Challenging on-chip SRAM security with boot-state statistics
On-chip memory is regarded by most secure system designers as a safe memory space, beyond the eyes of all but the most sophisticated attackers. Once a value is overwritten or the power has been removed, it is assumed that the data stored inside fully ceases to persist. However, as writes occur, the bit cells gradually wear; if data is written in an asymmetric way (with repeated writes of the same data), the stored information can later be partially reconstructed solely from statistical measurements of the cells' startup states. We present a technique for measuring the vulnerability of memory systems to such wear-in leakage, modeling the process as the recovery of bits from a noisy channel. We demonstrate our techniques on a 130nm SRAM device and demonstrate that if no countermeasures are used, a very simple prediction model is able to correctly reconstruct 27% of the bits of the written secret — enough to probabilistically reconstruct an RSA key.
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