适用于低电压嵌入式应用的0.5 um闪存技术

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194415

J.K. Yeh, H. Su, Y. Lin, C.D. Shieh, D. Kuo, M. Liang, G. Tao, F. List, L. Shi, R. Colclaser, N. Tandan, K. Chen, M. Chen, A. Gorkum

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引用次数: 2

摘要

高密度、低供电电压、低功耗和快速的程序/擦除闪存在便携式电子产品的数据存储中具有重要意义。在本文中，我们提出了一种嵌入在标准的0.5 um钛酸盐逻辑过程中的0.5 um低压闪存技术。采用堆叠栅极闪存单元，通过双向Fowler-Nordheim隧道实现编程和擦除。单细胞编程和擦除时间分别为5ms和10ms。使用页面模式编程，可以实现每比特5us的编程时间。单电池续航能力优于10次循环。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 0.5 um Flash Technology suitable for Low Voltage Embedded Applications

High density, low supply voltage, low power consumption and fast program/erase flash memory are important in data storage for applications in portable electronic products. In this paper we present a 0.5 um low voltage flash technology embedded in a standard 0.5 um Ti-salicide logic process. Stacked gate flash memory cell is chosen and both programming and erase are done through by bi-directional Fowler-Nordheim tunneling. Single cell programming and erasing times are 5ms and 10ms, respectively. With page mode programming, a programming time of 5us per bit are achieved. The single cell endurance is better than 10 cycles.

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27th European Solid-State Device Research Conference

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