{"title":"随时间介质击穿对氧化物厚度的依赖性","authors":"S. Oussalah, F. Nebel","doi":"10.1109/HKEDM.1999.836404","DOIUrl":null,"url":null,"abstract":"In this work, we investigate the reliability of SiO/sub 2/ films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under constant current injection. Assuming that the logarithm of the median-time-to-failure, In(t/sub 50/), is described by a linear electric field dependence. A generalized law for the long-term reliability of the dielectric, taking into account the applied electric field and the dielectric thickness, is proposed.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"On the oxide thickness dependence of the time-dependent-dielectric-breakdown\",\"authors\":\"S. Oussalah, F. Nebel\",\"doi\":\"10.1109/HKEDM.1999.836404\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we investigate the reliability of SiO/sub 2/ films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under constant current injection. Assuming that the logarithm of the median-time-to-failure, In(t/sub 50/), is described by a linear electric field dependence. A generalized law for the long-term reliability of the dielectric, taking into account the applied electric field and the dielectric thickness, is proposed.\",\"PeriodicalId\":342844,\"journal\":{\"name\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1999.836404\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1999.836404","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the oxide thickness dependence of the time-dependent-dielectric-breakdown
In this work, we investigate the reliability of SiO/sub 2/ films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under constant current injection. Assuming that the logarithm of the median-time-to-failure, In(t/sub 50/), is described by a linear electric field dependence. A generalized law for the long-term reliability of the dielectric, taking into account the applied electric field and the dielectric thickness, is proposed.
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