退火对纳米团束技术合成共掺杂ZnO dss薄膜的影响

2015 IEEE International Vacuum Electronics Conference (IVEC) Pub Date : 2015-08-27 DOI:10.1109/IVEC.2015.7224024

Zhiwei Zhao, Xuehua Li

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引用次数: 0

摘要

采用纳米团束技术制备了共掺杂ZnO薄膜，分别在200、400和700℃下进行了退火，并研究了温度的影响。进行了AFM图像和紫外吸收光谱分析。共掺杂ZnO在室温下表现出铁磁性，并研究了薄膜在退火温度变化后的饱和磁化性能。

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Influence of annealing on Co-doped ZnO DMSs thin films synthesized by nanocluster-beam technique

Co-doped ZnO thin films fabricated by nanocluster-beam technique were annealed at 200, 400 and 700°C and the influence of temperature has been investigated. AFM images and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films was also studied following the changing of annealing temperatures.

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2015 IEEE International Vacuum Electronics Conference (IVEC)

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