利用ALD TiN/Al2O3纳米层状电荷存储层增强闪存器件特性

2008 9th International Conference on Solid-State and Integrated-Circuit Technology Pub Date : 2008-12-30 DOI:10.1109/ICSICT.2008.4734702

S. Maikap, S. Z. Rahaman, W. Banerjee, C. Lin, P. Tzeng, C. Wang, M. Kao, M. Tsai

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引用次数: 0

摘要

研究了利用ALD TiN/Al2O3纳米层状电荷存储层增强闪存器件的特性。经退火处理后，在直径约3nm、密度为>1×1012/cm2的Al2O3薄膜中嵌套了TiN纳米晶。该存储器的编程速度为¿Vt >1 V@Vg/Vd=8 V/8 V, 10 s，擦除速度为¿Vt >1 V@Vg/Vd=-12 V/0 V, 1 ms。随着工作电压的增加，存储窗口增大(±vt> 6.7 V)。记忆窗口也随着TiN/Al2O3纳米层数的增加而增加。TiN纳米晶存储器件具有良好的耐久性(104次循环)和保持性(10年后在20°C和85°C时的电荷损失分别为~14%和~17%)，这可以用TiN纳米晶的高密度和分层电荷存储来解释。这种新型的纳米晶体存储结构可用于未来的纳米级闪存器件应用。

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Enhanced flash memory device characteristics using ALD TiN/Al2O3 nanolaminate charge storage layers

Enhanced flash memory device characteristics using ALD TiN/Al₂O₃ nanolaminate charge storage layers have been investigated. After annealing treatment, the TiN nanocrystals embedded in Al₂O₃ films with a small diameter of ~3 nm and a high-density of >1×10¹²/cm² have been formed. The memory devices show a high programming speed of ¿V_t >1 V@V_g/V_d=8 V/8 V, 10 ¿s and an erasing speed of ¿V_t >1 V@V_g/V_d=-12 V/0 V, 1 ms. The memory window is increased (¿V_t >6.7 V) with increasing the operation voltage. The memory window is also increased with increasing the number of TiN/Al₂O₃ nanolaminate layers. Good endurance (10⁴ cycles) and retention (charge loss of ~14% at 20°C and ~17% at 85°C after 10 years) characteristics of the TiN nanocrystal memory devices can be explained by both of the high-density and layer-by-layer charge storage in the TiN nanocrystals. This novel nanocrystal memory structure can be useful in future nanoscale flash memory device applications.

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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