1200V SiC沟槽MOSFET的性能和坚固性

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988904

D. Peters, R. Siemieniec, T. Aichinger, T. Basler, R. Esteve, W. Bergner, Daniel Kueck

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引用次数: 75

摘要

本文提出了一种新颖的碳化硅沟槽MOSFET概念。该器件旨在平衡低导通损耗和Si-IGBT的可靠性。介绍了45mΩ/1200 V CoolSiC™MOSFET的静态和动态性能的基本特征以及短路能力。导通电阻良好的温度特性，加上开关能量对温度的低灵敏度，简化了设计。长期的栅极氧化物测试表明，其外部故障率非常低，符合工业应用的要求。

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Performance and ruggedness of 1200V SiC — Trench — MOSFET

This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance as well as short circuit capability of the 45mΩ/1200 V CoolSiC™ MOSFET are presented. The favorable temperature behavior of the on-state resistance combined with a low sensitivity of the switching energies to temperature simplify the design-in. Long-term gate oxide tests reveal a very low extrinsic failure rate well matching the requirements of industrial applications.

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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