Aditya Tyagi, C. Gopi, P. Baldi, Vikash Kumar, A. Islam
{"title":"基于cnfet的0.1 V至0.6 V DC/DC变换器","authors":"Aditya Tyagi, C. Gopi, P. Baldi, Vikash Kumar, A. Islam","doi":"10.1109/RAECS.2014.6799605","DOIUrl":null,"url":null,"abstract":"This paper discusses a new DC/DC conversion technique for boosting very low voltage (100 mV) to 650 mV, which is the typical supply voltage for operating circuits in near-threshold and subthreshold region. The converter uses Carbon Nanotube Field Effect Transistors (CNFETs) in a hybrid inductive and capacitive circuit. The converter can boost 100 mV to 650 mV and hence is suitable for low power applications.","PeriodicalId":229600,"journal":{"name":"2014 Recent Advances in Engineering and Computational Sciences (RAECS)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"CNFET-based 0.1 V to 0.6 V DC/DC converter\",\"authors\":\"Aditya Tyagi, C. Gopi, P. Baldi, Vikash Kumar, A. Islam\",\"doi\":\"10.1109/RAECS.2014.6799605\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses a new DC/DC conversion technique for boosting very low voltage (100 mV) to 650 mV, which is the typical supply voltage for operating circuits in near-threshold and subthreshold region. The converter uses Carbon Nanotube Field Effect Transistors (CNFETs) in a hybrid inductive and capacitive circuit. The converter can boost 100 mV to 650 mV and hence is suitable for low power applications.\",\"PeriodicalId\":229600,\"journal\":{\"name\":\"2014 Recent Advances in Engineering and Computational Sciences (RAECS)\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Recent Advances in Engineering and Computational Sciences (RAECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RAECS.2014.6799605\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Recent Advances in Engineering and Computational Sciences (RAECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RAECS.2014.6799605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper discusses a new DC/DC conversion technique for boosting very low voltage (100 mV) to 650 mV, which is the typical supply voltage for operating circuits in near-threshold and subthreshold region. The converter uses Carbon Nanotube Field Effect Transistors (CNFETs) in a hybrid inductive and capacitive circuit. The converter can boost 100 mV to 650 mV and hence is suitable for low power applications.
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