用于激光介质抽运的氮化镓基发光二极管有源区过热温度的测定

2010 International Conference on Advanced Optoelectronics and Lasers Pub Date : 2010-11-11 DOI:10.1109/CAOL.2010.5634204

E. Lutsenko, V. N. Pavlovskii, A. Danilchyk, M. Rzheutski, A. G. Vainilovich, V. Z. Zubialevich, A. Muravitskaya, G. P. Yablonskii

{"title":"用于激光介质抽运的氮化镓基发光二极管有源区过热温度的测定","authors":"E. Lutsenko, V. N. Pavlovskii, A. Danilchyk, M. Rzheutski, A. G. Vainilovich, V. Z. Zubialevich, A. Muravitskaya, G. P. Yablonskii","doi":"10.1109/CAOL.2010.5634204","DOIUrl":null,"url":null,"abstract":"Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is promising for pumping of laser active media.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"124 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping\",\"authors\":\"E. Lutsenko, V. N. Pavlovskii, A. Danilchyk, M. Rzheutski, A. G. Vainilovich, V. Z. Zubialevich, A. Muravitskaya, G. P. Yablonskii\",\"doi\":\"10.1109/CAOL.2010.5634204\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is promising for pumping of laser active media.\",\"PeriodicalId\":254986,\"journal\":{\"name\":\"2010 International Conference on Advanced Optoelectronics and Lasers\",\"volume\":\"124 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Advanced Optoelectronics and Lasers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAOL.2010.5634204\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Advanced Optoelectronics and Lasers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAOL.2010.5634204","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用电光光谱的长波移和恒流下的电压降低，确定了由桥路半导体芯片制成的led的有源区过热温度。研究表明，直接液体主动冷却可显著降低LED芯片的热阻，为激光主动介质的抽运提供了良好的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping

Overheating temperature of active region of LEDs made of Bridgelux chips was determined using long-wavelength shift of the EL spectra as well as the voltage reduction at constant current. It was shown that direct liquid active cooling of LED chip reduces drastically its thermal resistance that is promising for pumping of laser active media.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 International Conference on Advanced Optoelectronics and Lasers

自引率

0.00%

发文量