利用单片集成锗光电二极管在3.8µm处进行光电探测

2021 IEEE 17th International Conference on Group IV Photonics (GFP) Pub Date : 2021-12-01 DOI:10.1109/GFP51802.2021.9673858

L. Reid, M. Nedeljkovic, W. Cao, L. Mastronardi, R. Slavík, G. Mashanovich

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引用次数: 0

摘要

在室温下，Ge-on-SOI波导集成光电二极管在3.8µm波长下具有0.1 a /W的高响应度。这是在本征锗集成探测器上进行3.8µm光探测的第一个例子。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photodetection at 3.8 µm Using Intrinsic Monolithic Integrated Germanium Photodiodes

Ge-on-SOI waveguide integrated photodiodes are demonstrated with a high responsivity of 0.1 A/W at a wavelength of 3.8 µm at room temperature. This is the first example of photodetection at 3.8 µm on an intrinsic germanium integrated detector.

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2021 IEEE 17th International Conference on Group IV Photonics (GFP)

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