{"title":"低温半导体电子学","authors":"R. Jaeger, F. Gaensslen","doi":"10.1109/ITHERM.1988.28689","DOIUrl":null,"url":null,"abstract":"The authors consider that, at any technology level, operation at liquid nitrogen temperature (LNT: 77.3 K) can directly yield a performance improvement exceeding that provided through down-scaling by a factor of two. Thus, MOS technology limits are extended by one generation through LNT operation. Because of its attractive speed, density, and power attributes, liquid-nitrogen-cooled CMOS represents a strategic technology alternative for mainframe computers, an area which has traditionally been the exclusive domain of bipolar technology. A summary of the advantages for MOS microelectronics operated at LNT is presented in a table and discussed.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Low temperature semiconductor electronics\",\"authors\":\"R. Jaeger, F. Gaensslen\",\"doi\":\"10.1109/ITHERM.1988.28689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors consider that, at any technology level, operation at liquid nitrogen temperature (LNT: 77.3 K) can directly yield a performance improvement exceeding that provided through down-scaling by a factor of two. Thus, MOS technology limits are extended by one generation through LNT operation. Because of its attractive speed, density, and power attributes, liquid-nitrogen-cooled CMOS represents a strategic technology alternative for mainframe computers, an area which has traditionally been the exclusive domain of bipolar technology. A summary of the advantages for MOS microelectronics operated at LNT is presented in a table and discussed.<<ETX>>\",\"PeriodicalId\":226424,\"journal\":{\"name\":\"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITHERM.1988.28689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITHERM.1988.28689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The authors consider that, at any technology level, operation at liquid nitrogen temperature (LNT: 77.3 K) can directly yield a performance improvement exceeding that provided through down-scaling by a factor of two. Thus, MOS technology limits are extended by one generation through LNT operation. Because of its attractive speed, density, and power attributes, liquid-nitrogen-cooled CMOS represents a strategic technology alternative for mainframe computers, an area which has traditionally been the exclusive domain of bipolar technology. A summary of the advantages for MOS microelectronics operated at LNT is presented in a table and discussed.<>
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