D. Pogany, C. Furbock, N. Seliger, P. Habaš, E. Gornik
{"title":"亚微米技术mosfet和双极晶体管的光学测试","authors":"D. Pogany, C. Furbock, N. Seliger, P. Habaš, E. Gornik","doi":"10.1109/ESSDERC.1997.194443","DOIUrl":null,"url":null,"abstract":"A noninvasive infrared laser interferometric technique is used to analyse 0.1 m-test-technology NMOSFETs and 0.5μm-technology bipolar junction transistors and PMOSFETs. Optical signals arising from free carrierand temperature-induced modulation of the laser beam are studied as a function of bias conditions, device operation frequency and lateral distance from the device. The experiments are found to be in good agreement with results of optical and thermal simulations.","PeriodicalId":424167,"journal":{"name":"27th European Solid-State Device Research Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Optical testing of submicron-technology MOSFETs and bipolar transistors\",\"authors\":\"D. Pogany, C. Furbock, N. Seliger, P. Habaš, E. Gornik\",\"doi\":\"10.1109/ESSDERC.1997.194443\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A noninvasive infrared laser interferometric technique is used to analyse 0.1 m-test-technology NMOSFETs and 0.5μm-technology bipolar junction transistors and PMOSFETs. Optical signals arising from free carrierand temperature-induced modulation of the laser beam are studied as a function of bias conditions, device operation frequency and lateral distance from the device. The experiments are found to be in good agreement with results of optical and thermal simulations.\",\"PeriodicalId\":424167,\"journal\":{\"name\":\"27th European Solid-State Device Research Conference\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"27th European Solid-State Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSDERC.1997.194443\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"27th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.1997.194443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical testing of submicron-technology MOSFETs and bipolar transistors
A noninvasive infrared laser interferometric technique is used to analyse 0.1 m-test-technology NMOSFETs and 0.5μm-technology bipolar junction transistors and PMOSFETs. Optical signals arising from free carrierand temperature-induced modulation of the laser beam are studied as a function of bias conditions, device operation frequency and lateral distance from the device. The experiments are found to be in good agreement with results of optical and thermal simulations.
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