窄线宽微转移印刷III-V-on-Si激光器110纳米调谐范围

2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM) Pub Date : 2022-07-01 DOI:10.1109/SUM53465.2022.9858218

Emadreza Soltanian, G. Muliuk, S. Uvin, Dongbo Wang, G. Lepage, P. Verheyen, J. Van Campenhout, S. Ertl, Johanna Rimböck, N. Vaissière, D. Néel, J. Ramírez, J. Decobert, B. Kuyken, Jing Zhang, G. Roelkens

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引用次数: 0

摘要

覆盖宽波长范围的片上激光源是相干光通信系统的关键实现因素之一。在这项工作中，我们首次展示了利用微转移印刷技术实现110 nm调谐范围的窄线宽III-V-on-Si激光器。

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Narrow-Linewidth Micro-Transfer-Printed III-V-on-Si Laser with 110 nm Tuning Range

On-chip laser sources covering a wide wavelength range is one of the key enablers to coherent optical communication systems. In this work, we demonstrate for the first time a narrow-linewidth III-V-on-Si laser with 110 nm tuning range realized using micro-transfer printing technology.

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2022 IEEE Photonics Society Summer Topicals Meeting Series (SUM)

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