Takashi Sato, M. Shirao, Y. Takino, N. Sato, N. Nishiyama, S. Arai
{"title":"1.3µm npn-AlGaInAs/InP晶体管激光器的室温激光工作","authors":"Takashi Sato, M. Shirao, Y. Takino, N. Sato, N. Nishiyama, S. Arai","doi":"10.1109/PHO.2011.6110715","DOIUrl":null,"url":null,"abstract":"A first room-temperature pulsed operation of a 1.3-μm wavelength npn AlGaInAs/InP transistor laser was achieved with a threshold emitter current and current gain of 130 mA and 1, respectively.","PeriodicalId":173679,"journal":{"name":"IEEE Photonic Society 24th Annual Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Room-temperature lasing operation of a 1.3-µm npn-AlGaInAs/InP transistor laser\",\"authors\":\"Takashi Sato, M. Shirao, Y. Takino, N. Sato, N. Nishiyama, S. Arai\",\"doi\":\"10.1109/PHO.2011.6110715\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A first room-temperature pulsed operation of a 1.3-μm wavelength npn AlGaInAs/InP transistor laser was achieved with a threshold emitter current and current gain of 130 mA and 1, respectively.\",\"PeriodicalId\":173679,\"journal\":{\"name\":\"IEEE Photonic Society 24th Annual Meeting\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonic Society 24th Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHO.2011.6110715\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonic Society 24th Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHO.2011.6110715","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Room-temperature lasing operation of a 1.3-µm npn-AlGaInAs/InP transistor laser
A first room-temperature pulsed operation of a 1.3-μm wavelength npn AlGaInAs/InP transistor laser was achieved with a threshold emitter current and current gain of 130 mA and 1, respectively.