最大化SiC mosfet开关能力的电流和电压混合源栅驱动器

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI:10.1109/WiPDAAsia49671.2020.9360286

Ryosuke Ishido, Yuta Okawauchi, K. Nakahara, Shinya Shirai, Masayoshi Yamamoto

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引用次数: 0

摘要

一种电流/电压混合源栅极驱动器(HGD)是实现高速开关(SW)而无栅极超速驱动的新技术。HGD应用于电感负载降压变换器中驱动SiC mosfet。该驱动器成功地将SW瞬态时间和功率损耗降低了18%-43%，具体取决于操作条件。

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Current and Voltage Hybrid Source Gate Driver for Maximizing the Switching Capability of SiC MOSFETs

A current/voltage hybrid source gate driver (HGD) has been newly developed to achieve high-speed switching (SW) with no gate overdrive. The HGD is applied to drive SiC MOSFETs in an inductive-load buck converter. The driver successfully reduces the SW transient time and power loss by 18%-43%, depending on operation conditions.

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2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

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