MQUAD微电子封装的瞬态热模型

Proceedings of 1994 IEEE/CHMT 10th Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM) Pub Date : 1994-02-01 DOI:10.1109/STHERM.1994.288989

B. Guenin

{"title":"MQUAD微电子封装的瞬态热模型","authors":"B. Guenin","doi":"10.1109/STHERM.1994.288989","DOIUrl":null,"url":null,"abstract":"The MQUAD microelectronic package was developed to provide a high level of thermal performance for high leadcount integrated circuits./sup 1/ A numerical, lumped-parameter transient thermal model has been developed which accurately predicts the temperature of the die and other components of an MQUAD package in situations in which the power to the die changes. Examples of such situations are the power-up and power-down cycles and power excursions. The model is used to predict the behavior of a 160 lead, cavity-down MQUAD package in these situations under conditions of low and high circuit board conductivity and natural and forced convection. The predictions of the model are shown to be in good agreement with experimental values for representative situations.<<ETX>>","PeriodicalId":107140,"journal":{"name":"Proceedings of 1994 IEEE/CHMT 10th Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Transient thermal model for the MQUAD microelectronic package\",\"authors\":\"B. Guenin\",\"doi\":\"10.1109/STHERM.1994.288989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The MQUAD microelectronic package was developed to provide a high level of thermal performance for high leadcount integrated circuits./sup 1/ A numerical, lumped-parameter transient thermal model has been developed which accurately predicts the temperature of the die and other components of an MQUAD package in situations in which the power to the die changes. Examples of such situations are the power-up and power-down cycles and power excursions. The model is used to predict the behavior of a 160 lead, cavity-down MQUAD package in these situations under conditions of low and high circuit board conductivity and natural and forced convection. The predictions of the model are shown to be in good agreement with experimental values for representative situations.<<ETX>>\",\"PeriodicalId\":107140,\"journal\":{\"name\":\"Proceedings of 1994 IEEE/CHMT 10th Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE/CHMT 10th Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STHERM.1994.288989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE/CHMT 10th Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.1994.288989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

摘要

MQUAD微电子封装是为高引线数集成电路提供高水平的热性能而开发的。建立了一种集总参数的瞬态热数值模型，该模型可以准确地预测在模具功率变化的情况下MQUAD封装的模具和其他部件的温度。此类情况的示例包括上电和下电周期以及功率偏移。该模型用于预测160引线空腔MQUAD封装在电路板电导率低和高、自然对流和强制对流条件下的性能。模型的预测结果与典型情况下的实验值吻合良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Transient thermal model for the MQUAD microelectronic package

The MQUAD microelectronic package was developed to provide a high level of thermal performance for high leadcount integrated circuits./sup 1/ A numerical, lumped-parameter transient thermal model has been developed which accurately predicts the temperature of the die and other components of an MQUAD package in situations in which the power to the die changes. Examples of such situations are the power-up and power-down cycles and power excursions. The model is used to predict the behavior of a 160 lead, cavity-down MQUAD package in these situations under conditions of low and high circuit board conductivity and natural and forced convection. The predictions of the model are shown to be in good agreement with experimental values for representative situations.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1994 IEEE/CHMT 10th Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM)

自引率

0.00%

发文量