{"title":"场效应管建模的新方法","authors":"P. Nevermann, I. Wolff","doi":"10.1109/EUMA.1992.335774","DOIUrl":null,"url":null,"abstract":"A FET model is presented whichl is based on an analytical approximation of the velocity overshoot. The bias dependent peak velocity and the electric field in short-channel-FET's are described by means of a new principle in physical simulation. Thiis approach is equivalent to the use of a saturation velocity, whiiclh depends not only on gate-length but also on bias. Surface effects are taken into account in a simple way. The theoretical results are in good agreement with experimental data of the small signal and noise behaviour of a GaAs-MESFET.","PeriodicalId":317106,"journal":{"name":"1992 22nd European Microwave Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A New Approach for FET Modelling\",\"authors\":\"P. Nevermann, I. Wolff\",\"doi\":\"10.1109/EUMA.1992.335774\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A FET model is presented whichl is based on an analytical approximation of the velocity overshoot. The bias dependent peak velocity and the electric field in short-channel-FET's are described by means of a new principle in physical simulation. Thiis approach is equivalent to the use of a saturation velocity, whiiclh depends not only on gate-length but also on bias. Surface effects are taken into account in a simple way. The theoretical results are in good agreement with experimental data of the small signal and noise behaviour of a GaAs-MESFET.\",\"PeriodicalId\":317106,\"journal\":{\"name\":\"1992 22nd European Microwave Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 22nd European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1992.335774\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 22nd European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1992.335774","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A FET model is presented whichl is based on an analytical approximation of the velocity overshoot. The bias dependent peak velocity and the electric field in short-channel-FET's are described by means of a new principle in physical simulation. Thiis approach is equivalent to the use of a saturation velocity, whiiclh depends not only on gate-length but also on bias. Surface effects are taken into account in a simple way. The theoretical results are in good agreement with experimental data of the small signal and noise behaviour of a GaAs-MESFET.
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