{"title":"6.78 MHz大功率IPT应用中电流驱动的d类和e类半波整流器的比较","authors":"G. Kkelis, D. Yates, P. Mitcheson","doi":"10.1109/WPT.2015.7140166","DOIUrl":null,"url":null,"abstract":"Two current driven half wave rectifier topologies, Class-D and -E, have been characterised for IPT applications. Both rectifiers utilised SiC Schottky diodes for high power capability. The Class-D topology has reached efficiencies up to 95% and the Class-E up to 90%. Both topologies achieved their highest efficiencies at high voltage operation as the parasitic capacitances of the SiC diodes were affecting the circuit's operation at low voltages.","PeriodicalId":194427,"journal":{"name":"2015 IEEE Wireless Power Transfer Conference (WPTC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Comparison of current driven Class-D and Class-E half-wave rectifiers for 6.78 MHz high power IPT applications\",\"authors\":\"G. Kkelis, D. Yates, P. Mitcheson\",\"doi\":\"10.1109/WPT.2015.7140166\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two current driven half wave rectifier topologies, Class-D and -E, have been characterised for IPT applications. Both rectifiers utilised SiC Schottky diodes for high power capability. The Class-D topology has reached efficiencies up to 95% and the Class-E up to 90%. Both topologies achieved their highest efficiencies at high voltage operation as the parasitic capacitances of the SiC diodes were affecting the circuit's operation at low voltages.\",\"PeriodicalId\":194427,\"journal\":{\"name\":\"2015 IEEE Wireless Power Transfer Conference (WPTC)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Wireless Power Transfer Conference (WPTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WPT.2015.7140166\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Wireless Power Transfer Conference (WPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WPT.2015.7140166","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of current driven Class-D and Class-E half-wave rectifiers for 6.78 MHz high power IPT applications
Two current driven half wave rectifier topologies, Class-D and -E, have been characterised for IPT applications. Both rectifiers utilised SiC Schottky diodes for high power capability. The Class-D topology has reached efficiencies up to 95% and the Class-E up to 90%. Both topologies achieved their highest efficiencies at high voltage operation as the parasitic capacitances of the SiC diodes were affecting the circuit's operation at low voltages.
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