在可修复和可靠的内存核心中实现最佳的备用利用率

Minsu Choi, N. Park, F. Lombardi, Yong-Bin Kim, V. Piuri
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引用次数: 17

摘要

片上系统(SoC)技术的进步依赖于许多关键应用的制造和组装高性能系统核心。在这些核心中,内存占据了SoC面积的最大部分;这一趋势很可能在未来继续下去,因为人们普遍预计,到2014年,这一比例将接近94%的水平。由于存储单元比逻辑单元更容易出现缺陷和故障,冗余被广泛用于通过替换备用(行和列)来修复,以增强缺陷和容错能力。与传统的PCB(印刷电路板)或MCM(多芯片模块)系统不同,嵌入式内核一旦被制造到SoC上,就无法进行物理替换。为了提高制造良率和现场可靠性,利用ATE(自动化测试设备)和BISR(内置自修复)为嵌入式存储核心分配冗余。由于ATEs(制造缺陷修复)和BISR(现场故障修复)依赖于所提供的冗余(行和列),本文提出了备用分区和利用技术,以实现嵌入式存储核心的良率和可靠性的最佳组合。给出了单维(即备用列)和二维(即备用列和行)情况下的参数化仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optimal spare utilization in repairable and reliable memory cores
Advances in System-on-Chip (SoC) technology rely on manufacturing and assembling high-performance system cores for many critical applications. Among these cores, memory occupies the largest portion of the SoC area; this trend much likely will continue in the future as it is widely anticipated that it will approach the 94% level by the year 2014. As memory cells are more prone to defects and faults than logic cells, redundancy has been extensively used for enhancing defect and fault tolerance through repair by spare (row and column) replacement. Unlike legacy PCB (printed circuit board) or MCM (multichip module) based systems, embedded cores cannot be physically replaced once they are fabricated onto a SoC. To realize both enhanced manufacturing yield and field reliability, ATE (automated test equipment) and BISR (built-in-self-repair) are utilized to allocate redundancy for the embedded memory cores. As ATEs (for the repair of manufacturing defects) and BISR (for repairing field faults) rely on the provided redundancy (rows and columns), spare partition and utilization techniques are proposed in this paper to achieve an optimal combination of yield and reliability for embedded memory cores. Parametric simulation results for the single dimensional (i. e., spare columns) and two-dimensional (i. e., both spare columns and rows) cases are provided.
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