ku波段卫星通信用宽带20W氮化镓大功率放大器

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9963108

Yujie Liu, Zhilong Xiao, Shiquan Zhu, Huanpeng Wanq, Shuman Mao, Qingzhi Wu, R. Xu, B. Yan, Yuehang Xu

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引用次数: 2

摘要

设计了一种基于0.15µm GaN HEMT工艺的ku波段高功率放大器。为了提高功率附加效率和增益，对于三级拓扑结构，选择了1:6:38.4的高栅极宽驱动比。采用多阶切比雪夫阻抗变压器实现高阻抗变换比匹配网络。同时，采用紧凑的低插入损耗8路并网，提高了输出功率和功率附加效率。连续波(CW)下的测量结果表明，在13-17 GHz范围内，小信号增益超过30 dB，输入回波损耗(IRL)优于-11dB。输出功率在42dbm ~ 44dbm之间，PAE (power-added efficiency)大于30%。芯片尺寸为2.6 mm×4.3mm。

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A Broadband 20W GaN High Power Amplifier for Ku-band satellite communication

A Ku-band high power amplifier (HPA) is designed based on the 0.15µm GaN HEMT process. To improve the power added efficiency and gain, a high gate-width drive ratio of 1:6:38.4 is selected for a three-stage topology. Multi-order Chebyshev impedance transformers are used for realizing this high impedance transformation ratio match networks. Meanwhile, a compact 8-way power combining network with low insertion loss is adopted to improve the output power and power added efficiency. The measured results under continuous wave (CW) show that the small signal gain exceeds 30 dB over 13–17 GHz, and the input return loss (IRL) is better than -11dB. The output power is between 42–44 dBm and the power-added efficiency (PAE) is more than 30%. The chip size is 2.6 mm×4.3mm.

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来源期刊

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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