高频去嵌入策略的比较:阻抗校正与原位标定

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-16 DOI:10.1109/ICMTS.2000.1193989

R. Gillon, W. Van De Sype, D. Vanhoenaker, L. Martens

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引用次数: 5

摘要

比较了目前广泛应用的假直流校正技术和新井原位校正技术。由于约束约束约束结构必须具有理想的特性，限制了约束约束约束技术的精度。利用非原位电阻法测量这些结构的真实特性，以便准确地评估电阻率的精度限制。原位校准似乎更准确，更灵活，特别是在硅基板上。

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Comparing high-frequency de-embedding strategies: immittance correction and in-situ calibration

A comparison is made between the widely used immittance correction technique (dummy dc-embedding) and the newel" in-situ calibration. The accuracy of the immittancc CDITcClion technique is limited hy the ils$llmption that the rcl"crcnce structures lH\ve ideal characteristics. Using ill-situ cal ilmltlon tlic true characteristics of these structures call be me

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ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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