高速I/O电源完整性网络设计的MIM电容效率研究:MIM和MIMless高速I/O性能表征

F. Tan, Ming Dak Chai, Mohamad Shahrir bin Tamrin
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引用次数: 0

摘要

电容在高速I/O电源完整性网络设计中起着重要的作用。为了保证高速I/O电源完整性网络的性能,在高速I/O电源完整性网络中使用了不同形式的电容器。本文比较了MIM电容和MOS电容的有效性。MIM电容大量出现,但放置在离HSIO电路更远的地方。而MOS电容的数量相当低,但放置在更靠近HSIO电路。因此,在考虑两种不同电容的功率完整性设计期间,存在性能权衡。虽然MOS电容是首选,但引入MIM电容已成为一个有吸引力的选择;因为它以更低的价格提供更多的电容。MOS电容可以用MIM电容代替吗?讨论将集中在PDN分析,以描述行为的变化和验证结果,以显示MIM电容完全去除时的差距。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
MIM capacitance efficiency study for high speed I/O power integrity network design: MIM and MIMless high speed I/O performance characterization
Capacitance is very important in High Speed I/O power integrity network design. There are different form of capacitors being used on the High Speed I/O Power Integrity Network to ensure the performance of the circuit. In this paper, the effectiveness of MIM capacitance and MOS capacitance is compared. MIM capacitance comes in bulk quantity but placed further away from the HSIO circuits. While MOS capacitance comes in considerably lower quantity but placed closer to the HSIO circuits. As such, there is a performance trade-off during the power integrity design considering the two different capacitances. While MOS capacitance is the preferred choice, the introduction of MIM capacitance has become an attractive option; as it offers much more capacitance at lower price. Can MOS capacitance be replaced by the MIM capacitance? The discussion will focus on PDN analysis to describe the change in behavior and the validation results to show the gap when MIM capacitance is completely removed.
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