用于器件/电路仿真的先进双极晶体管冲击电离建模

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51057

H. Jeong, J. Fossum

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引用次数: 4

摘要

在先进的双极晶体管中，冲击电离依赖于集电极中复杂的电场分布，在物理(半数值)器件模型中得到了解释。集电极分析全面地处理了准饱和，从而解释了在大电流下电流诱导的空间电荷区域的形成以及结空间电荷区域的调制。仿真(用MMSPICE)和实测特性进行了比较，以支持该模型

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Modeling impact ionization in advanced bipolar transistors for device/circuit simulation

Impact ionization in advanced bipolar transistors, which depends on the complex electric-field distribution in the collector, is accounted for in a physical (seminumerical) device model. The collector analysis comprehensively treats quasi-saturation, and thus accounts for the formation of the current-induced space-charge region at high currents as well as the modulation of the junction space-charge region. Simulated (with MMSPICE) and measured characteristics are compared in support of the model.<>

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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