{"title":"柔性场效应晶体管的构造技术,简要综述","authors":"Haider Sahib Al-Mumen","doi":"10.30772/qjes.v14i2.753","DOIUrl":null,"url":null,"abstract":"Since Flexible field effect transistor (F-FET) is the building block of any sophisticated electronic circuit, particularly in the area of wearable electronics and biomedical sensors, it has drawn a lot of attention recently. It is usually fabricated using stretchable semiconductors over polymeric substrates. This paper displays a brief overview of the current fabrication techniques of the F-FET, specifically in terms of type of substrates and nano semiconductor technologies.","PeriodicalId":227530,"journal":{"name":"Al-Qadisiyah Journal for Engineering Sciences","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flexible Field effect transistor construction techniques, a brief review\",\"authors\":\"Haider Sahib Al-Mumen\",\"doi\":\"10.30772/qjes.v14i2.753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Since Flexible field effect transistor (F-FET) is the building block of any sophisticated electronic circuit, particularly in the area of wearable electronics and biomedical sensors, it has drawn a lot of attention recently. It is usually fabricated using stretchable semiconductors over polymeric substrates. This paper displays a brief overview of the current fabrication techniques of the F-FET, specifically in terms of type of substrates and nano semiconductor technologies.\",\"PeriodicalId\":227530,\"journal\":{\"name\":\"Al-Qadisiyah Journal for Engineering Sciences\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Al-Qadisiyah Journal for Engineering Sciences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.30772/qjes.v14i2.753\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Al-Qadisiyah Journal for Engineering Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.30772/qjes.v14i2.753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Flexible Field effect transistor construction techniques, a brief review
Since Flexible field effect transistor (F-FET) is the building block of any sophisticated electronic circuit, particularly in the area of wearable electronics and biomedical sensors, it has drawn a lot of attention recently. It is usually fabricated using stretchable semiconductors over polymeric substrates. This paper displays a brief overview of the current fabrication techniques of the F-FET, specifically in terms of type of substrates and nano semiconductor technologies.