柔性场效应晶体管的构造技术,简要综述

Haider Sahib Al-Mumen
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摘要

由于柔性场效应晶体管(F-FET)是任何复杂电子电路的组成部分,特别是在可穿戴电子和生物医学传感器领域,它最近引起了人们的广泛关注。它通常是用可拉伸的半导体在聚合物衬底上制造的。本文简要概述了当前fet的制造技术,特别是在衬底类型和纳米半导体技术方面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Flexible Field effect transistor construction techniques, a brief review
Since Flexible field effect transistor (F-FET) is the building block of any sophisticated electronic circuit, particularly in the area of wearable electronics and biomedical sensors, it has drawn a lot of attention recently. It is usually fabricated using stretchable semiconductors over polymeric substrates. This paper displays a brief overview of the current fabrication techniques of the F-FET, specifically in terms of type of substrates and nano semiconductor technologies.
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