GaAs-AlGaAs HEMT欧姆触点的辐射坚固性

11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487) Pub Date : 2001-09-10 DOI:10.1109/CRMICO.2001.961618

R. Konakova, V. V. Milenin, O. E. Rengevych, M.A. Stovpovoy

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引用次数: 0

摘要

给出了/spl γ /-辐射对GaAs-AlGaAs场效应晶体管欧姆接触比接触电阻率影响的研究结果。介绍了表面微起伏的研究及其与欧姆接触参数的关系。对两种结构类型进行了不同热处理的研究。结果表明，/spl γ /-辐射可用于参数改进;辐射极限被确定了。

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The radiation firmness of the GaAs-AlGaAs HEMT ohmic contacts

The results of investigation of the effect of /spl gamma/-radiation on the GaAs-AlGaAs field-effect transistors ohmic contacts specific contact resistivity are presented. The surface microrelief investigations and their correlation with the ohmic contacts parameters are presented. Investigations were carried out for two structure types subjected to various thermal treatment. It was shown that /spl gamma/-radiation may be used for parameters improvement; the radiation limit was determined.

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11th International Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.01EX487)

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