高压直流应用中SiC mosfet体二极管浪涌电流能力的研究

2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) Pub Date : 2016-09-01 DOI:10.1109/EPE.2016.7695448

Diane-Perle Sadik, Stefanie Heinig, Keijo Jacobs, D. Johannesson, Jang-Kwon Lim, M. Nawaz, F. Dijkhuizen, M. Bakowski, S. Norrga, H. Nee

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引用次数: 14

摘要

实验分析了SiC mosfet体二极管的浪涌电流能力，探讨了SiC mosfet用于高压直流应用的可能性。SiC MOSFET分立器件和模块已经在浪涌电流高达额定电流的10倍和持续时间长达2毫秒的情况下进行了测试。虽然不能排除堆叠故障的存在，但实验表明，故障可能是由于位于SiC MOSFET中的寄生n-p-n晶体管的锁存引起的。

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Investigation of the surge current capability of the body diode of SiC MOSFETs for HVDC applications

The surge current capability of the body-diode of SiC MOSFETs is experimentally analyzed in order to investigate the possibility of using SiC MOSFETs for HVDC applications. SiC MOSFET discrete devices and modules have been tested with surge currents up to 10 times the rated current and for durations up to 2 ms. Although the presence of stacking faults cannot be excluded, the experiments reveal that the failure may occur due to the latch-up of the parasitic n-p-n transistor located in the SiC MOSFET.

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来源期刊

2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)

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