{"title":"SiGe HBT技术中的20gs /秒模数Sigma-Delta调制器","authors":"Xiangtao Li, W. Kuo, Yuan Lu, J. Cressler","doi":"10.1109/CICC.2006.320909","DOIUrl":null,"url":null,"abstract":"This paper presents a monolithic continuous-time 2nd-order analog-to-digital sigma-delta modulator implemented in third-generation, 200 GHz SiGe HBT technology. The modulator can operate at a sampling rate of 20 GS/sec with SNRs of 30.5 dB over a signal band from DC to 312.5 MHz, and 51 dB over 1 MHz bandwidth. Operating off a +3.5 V power supply, the modulator dissipates a total of 490 mW. The die occupies an area of 1.58 times 1.7 mm2","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"734 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 20 GS/sec Analog-to-Digital Sigma-Delta Modulator in SiGe HBT Technology\",\"authors\":\"Xiangtao Li, W. Kuo, Yuan Lu, J. Cressler\",\"doi\":\"10.1109/CICC.2006.320909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a monolithic continuous-time 2nd-order analog-to-digital sigma-delta modulator implemented in third-generation, 200 GHz SiGe HBT technology. The modulator can operate at a sampling rate of 20 GS/sec with SNRs of 30.5 dB over a signal band from DC to 312.5 MHz, and 51 dB over 1 MHz bandwidth. Operating off a +3.5 V power supply, the modulator dissipates a total of 490 mW. The die occupies an area of 1.58 times 1.7 mm2\",\"PeriodicalId\":269854,\"journal\":{\"name\":\"IEEE Custom Integrated Circuits Conference 2006\",\"volume\":\"734 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Custom Integrated Circuits Conference 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2006.320909\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 20 GS/sec Analog-to-Digital Sigma-Delta Modulator in SiGe HBT Technology
This paper presents a monolithic continuous-time 2nd-order analog-to-digital sigma-delta modulator implemented in third-generation, 200 GHz SiGe HBT technology. The modulator can operate at a sampling rate of 20 GS/sec with SNRs of 30.5 dB over a signal band from DC to 312.5 MHz, and 51 dB over 1 MHz bandwidth. Operating off a +3.5 V power supply, the modulator dissipates a total of 490 mW. The die occupies an area of 1.58 times 1.7 mm2