{"title":"采用零静态功率动态偏移抵消技术的低偏置锁存比较器","authors":"M. Miyahara, A. Matsuzawa","doi":"10.1109/ASSCC.2009.5357221","DOIUrl":null,"url":null,"abstract":"A low-offset latched comparator using new dynamic offset cancellation technique is proposed. The new technique achieves low offset voltage without pre-amplifier and quiescent current. Furthermore the overdrive voltage of the input transistor can be optimized to reduce the offset voltage of the comparator independent of the input common mode voltage. A prototype comparator has been fabricated in 90 nm 9M1P CMOS technology with 152 µm2. Experimental results show that the comparator achieves 3.8 mV offset at 1 sigma at 500 MHz operating, while dissipating 39 μW from a 1.2 V supply.","PeriodicalId":263023,"journal":{"name":"2009 IEEE Asian Solid-State Circuits Conference","volume":"888 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"69","resultStr":"{\"title\":\"A low-offset latched comparator using zero-static power dynamic offset cancellation technique\",\"authors\":\"M. Miyahara, A. Matsuzawa\",\"doi\":\"10.1109/ASSCC.2009.5357221\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-offset latched comparator using new dynamic offset cancellation technique is proposed. The new technique achieves low offset voltage without pre-amplifier and quiescent current. Furthermore the overdrive voltage of the input transistor can be optimized to reduce the offset voltage of the comparator independent of the input common mode voltage. A prototype comparator has been fabricated in 90 nm 9M1P CMOS technology with 152 µm2. Experimental results show that the comparator achieves 3.8 mV offset at 1 sigma at 500 MHz operating, while dissipating 39 μW from a 1.2 V supply.\",\"PeriodicalId\":263023,\"journal\":{\"name\":\"2009 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"888 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"69\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2009.5357221\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2009.5357221","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low-offset latched comparator using zero-static power dynamic offset cancellation technique
A low-offset latched comparator using new dynamic offset cancellation technique is proposed. The new technique achieves low offset voltage without pre-amplifier and quiescent current. Furthermore the overdrive voltage of the input transistor can be optimized to reduce the offset voltage of the comparator independent of the input common mode voltage. A prototype comparator has been fabricated in 90 nm 9M1P CMOS technology with 152 µm2. Experimental results show that the comparator achieves 3.8 mV offset at 1 sigma at 500 MHz operating, while dissipating 39 μW from a 1.2 V supply.