Changyu Tan, Marco Stecca, T. Soeiro, Jianning Dong, P. Bauer
{"title":"采用硅/碳化硅混合动力开关的电动汽车牵引驱动性能评价","authors":"Changyu Tan, Marco Stecca, T. Soeiro, Jianning Dong, P. Bauer","doi":"10.1109/PEMC48073.2021.9432574","DOIUrl":null,"url":null,"abstract":"The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch (HyS) can be used to exploit the advantageous features of both semiconductor and materials technologies. In this paper, a HyS-based inverter designed for the application of Electric Vehicle (EV) traction is compared to the conventional inverter assembled with Si-based IGBTs and SiC-based MOS-FETs. According to different standardized driving cycles, EVs operate in low partial load for a considerable amount of the time. Therefore, in this application, semiconductor conduction losses can be considerably reduced when unipolar switches such as MOSFETs are used. All in all, this work shows that the HyS configuration constitutes a good compromise between efficiency and cost when compared to the solution implementing only Si-based IGBT or solely SiC-based MOSFETs.","PeriodicalId":349940,"journal":{"name":"2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Performance Evaluation of an Electric Vehicle Traction Drive using Si/SiC Hybrid Switches\",\"authors\":\"Changyu Tan, Marco Stecca, T. Soeiro, Jianning Dong, P. Bauer\",\"doi\":\"10.1109/PEMC48073.2021.9432574\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch (HyS) can be used to exploit the advantageous features of both semiconductor and materials technologies. In this paper, a HyS-based inverter designed for the application of Electric Vehicle (EV) traction is compared to the conventional inverter assembled with Si-based IGBTs and SiC-based MOS-FETs. According to different standardized driving cycles, EVs operate in low partial load for a considerable amount of the time. Therefore, in this application, semiconductor conduction losses can be considerably reduced when unipolar switches such as MOSFETs are used. All in all, this work shows that the HyS configuration constitutes a good compromise between efficiency and cost when compared to the solution implementing only Si-based IGBT or solely SiC-based MOSFETs.\",\"PeriodicalId\":349940,\"journal\":{\"name\":\"2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PEMC48073.2021.9432574\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEMC48073.2021.9432574","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performance Evaluation of an Electric Vehicle Traction Drive using Si/SiC Hybrid Switches
The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch (HyS) can be used to exploit the advantageous features of both semiconductor and materials technologies. In this paper, a HyS-based inverter designed for the application of Electric Vehicle (EV) traction is compared to the conventional inverter assembled with Si-based IGBTs and SiC-based MOS-FETs. According to different standardized driving cycles, EVs operate in low partial load for a considerable amount of the time. Therefore, in this application, semiconductor conduction losses can be considerably reduced when unipolar switches such as MOSFETs are used. All in all, this work shows that the HyS configuration constitutes a good compromise between efficiency and cost when compared to the solution implementing only Si-based IGBT or solely SiC-based MOSFETs.