GMR结构ESD破坏绝热模型的局限性

E. Granstrom, N. Tabat
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引用次数: 4

摘要

图像化的巨磁电阻(GMR)薄膜类似于不同尺寸的无屏蔽传感器,受到模拟ESD的影响。随着传感器宽度的减小,对于修改后的人体模型(150 /spl ω /, 150 pF),失效电压在最窄的器件上经过一个最小值,然后急剧增加。与绝热预测相反,较小宽度的器件(<0.75 /spl mu/m)由于传感器触点的热导性而对ESD更加稳健。这些结果应该延伸到GMR磁头,并表明对于更长的ESD事件,改变传感器宽度以获得更高的面密度记录可能会部分缓解更高ESD灵敏度的趋势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Limitations of the adiabatic model for ESD failure in GMR structures
Patterned giant magnetoresistance (GMR) films resembling shield-less sensors with varying sizes have been subjected to simulated ESD. As sensor width decreases, the failure voltage for a modified human body model (150 /spl Omega/, 150 pF) passes through a minimum before sharply increasing for narrowest devices. In contrast to adiabatic predictions, smaller width devices (<0.75 /spl mu/m) become more robust to ESD due to the thermal conductance of the sensor contacts. These results should extend to GMR heads, and suggest that for longer ESD events, changes in sensor width for higher areal density recording may partially mitigate the trend towards greater ESD sensitivity.
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