{"title":"氢化纳米晶硅的氧化特性","authors":"Ming Liu, H. Dou, Yuliang L. He, Xinliu Jiang","doi":"10.1117/12.300728","DOIUrl":null,"url":null,"abstract":"The hydrogenated nano-crystalline silicon (nc-Si:H) films are prepared using conventional plasma enhanced chemical-vapor- deposition (PECVD) system and oxidized by plasma and high- temperature treatment which all doped oxygen into nc-Si:H film. The contents of hydrogen and oxygen, the infrared absorption spectra, photo-luminescence (PL) spectra are measured. The PL peak wavelengths blue-shift from 695 nm to 660 nm at 77 K, but there are still no obvious visible PL at room-temperature through oxidized post-processing. The bonded forms of oxygen in nc-Si:H are changed with different oxidized way and their influence on PL spectra are also investigated.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Oxidized characteristics of hydrogenated nanocrystalline silicon\",\"authors\":\"Ming Liu, H. Dou, Yuliang L. He, Xinliu Jiang\",\"doi\":\"10.1117/12.300728\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The hydrogenated nano-crystalline silicon (nc-Si:H) films are prepared using conventional plasma enhanced chemical-vapor- deposition (PECVD) system and oxidized by plasma and high- temperature treatment which all doped oxygen into nc-Si:H film. The contents of hydrogen and oxygen, the infrared absorption spectra, photo-luminescence (PL) spectra are measured. The PL peak wavelengths blue-shift from 695 nm to 660 nm at 77 K, but there are still no obvious visible PL at room-temperature through oxidized post-processing. The bonded forms of oxygen in nc-Si:H are changed with different oxidized way and their influence on PL spectra are also investigated.\",\"PeriodicalId\":362287,\"journal\":{\"name\":\"Thin Film Physics and Applications\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.300728\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.300728","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Oxidized characteristics of hydrogenated nanocrystalline silicon
The hydrogenated nano-crystalline silicon (nc-Si:H) films are prepared using conventional plasma enhanced chemical-vapor- deposition (PECVD) system and oxidized by plasma and high- temperature treatment which all doped oxygen into nc-Si:H film. The contents of hydrogen and oxygen, the infrared absorption spectra, photo-luminescence (PL) spectra are measured. The PL peak wavelengths blue-shift from 695 nm to 660 nm at 77 K, but there are still no obvious visible PL at room-temperature through oxidized post-processing. The bonded forms of oxygen in nc-Si:H are changed with different oxidized way and their influence on PL spectra are also investigated.
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