一种基于浮栅MOS晶体管的增强动态开关逻辑

G. Hang, Danyan Zhang, Xuanchang Zhou, X. You
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引用次数: 0

摘要

提出了一种基于多输入浮栅MOS(FGMOS)晶体管的新型增强动态逻辑。该电路技术采用n通道多输入FGMOS下拉逻辑树来代替传统的增强型差分级联电压开关逻辑(EDCVSL)电路中的nMOS逻辑树。利用多输入FGMOS晶体管,大大简化了EDCVSL的逻辑树。所提出的动态逻辑不需要补充输入,并且保留了EDCVSL的优点。给出了一种利用求和信号合成n通道多输入FGMOS逻辑树的简单方法。采用台积电0.35μm 2-ploy 4金属CMOS技术的HSPICE仿真验证了所提出电路的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Enhanced Dynamic Switch Logic with Floating-Gate MOS Transistors
A new enhanced dynamic logic using multiple-input floating-gate MOS(FGMOS) transistors is presented. The circuit technique is designed using an n-channel multiple-input FGMOS pull down logic tree instead of the nMOS logic tree in the conventional enhanced differential cascode voltage switch logic (EDCVSL) circuit. The logic tree of EDCVSL is dramatically simplified by utilizing multiple-input FGMOS transistors. The proposed dynamic logic does not require complementary inputs, and keeps the benefits of EDCVSL. A simple synthesis technique of the n-channel multiple-input FGMOS logic tree by employing summation signal is given. HSPICE simulations using TSMC 0.35μm 2-ploy 4-metal CMOS technology have verified the effectiveness of the proposed circuits.
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