干涉光刻技术制造的超高空间频率、高对比度周期结构

H. Nguyen, J. Britten, R. Boyd, B. Shore, M. Perry
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摘要

在氧化物中制作多层高效介质反射光栅、351nm高效透射光栅等开发工作中,我们需要非常高对比度的光刻胶光栅轮廓。高对比度型材是具有非常陡峭的侧壁,大于80度的型材。用干涉光刻技术实现高对比度轮廓是相当困难的。电场分布呈正弦分布。因此,可以得出这样的结论:曲线类似于正弦波,如图1a所示。干涉光刻的早期工作产生了类似于图1a所示的光栅轮廓。我们了解到,如果在加工步骤中非常小心,可以得到非常不同的轮廓。图1b显示了光刻胶中非常高对比度、高纵横比的光栅轮廓。图1a和图lb之间的区别在于:1)图lb中的光刻胶轮廓已经完全发展到基板上,2)图1b中使用的光刻胶的对比特性优于图1a中使用的光刻胶。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultrahigh Spatial-Frequency, High-Contrast Periodic Structures Produced by Interference Lithography
During efforts to produce multilayer high efficiency dielectric reflection gratings in oxides, 351nm high efficiency transmission gratings, and other development work, we required very high-contrast grating profiles in photoresist. High-contrast profiles are profiles with very steep sidewalls, greater than 80 degrees. It is quite difficult to achieve high-contrast profiles using interference lithography. The electric field distribution is sinusoidal. Therefore, one would conclude that the profile would resemble a sinusoid, as shown in Figure 1a. Early work with interference lithography produced grating profiles similar to the ones shown in Figure 1a.1-3 We have learned that if great care is taken in the processing steps, very different profiles can be achieved. Figure 1b shows a very high-contrast, high-aspect ratio grating profile in photoresist. The difference between Figure 1a and Figure lb is that 1) the photoresist profile in Figure lb has completely developed through to the substrate, and 2) the contrast characteristics of the photoresist used in Figure 1b are superior over the photoresist used in Figure 1a.
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