先进系统大规模集成电路氢处理新指南

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015459

E. Morifuji, T. Kumamori, M. Muta, K. Suzuki, M. S. Krishnan, T. Brożek, X. Li, W. Asano, M. Nishigori, N. Yanagiya, S. Yamada, K. Miyamoto, T. Noguchi, M. Kakumu

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引用次数: 7

摘要

在本文中，我们主要关注氢相关工艺及其对系统LSI的影响。氢不仅影响DRAM性能，还影响MOSFET的可靠性特性，如NBTI(负偏置温度不稳定性)、HCI(热载流子注入)和TDDB。我们证明了NBTI和HCI被过量的氢降解，同时改善了eDRAM的保留特性。本文首次证明了小尺寸MOSFET中TDDB的异常退化是由STI的压缩应力引起的，并且与氢过程有很强的相关性。氢工艺的优化是未来高可靠性系统LSI不可缺少的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New guideline for hydrogen treatment in advanced system LSI

In this paper, we focus on hydrogen related processes and its impact on system LSI. Hydrogen affects not only DRAM performance but also reliability characteristics for MOSFET such as NBTI (negative bias temperature instability), HCI (hot carrier injection), and TDDB. We demonstrate that NBTI and HCI are degraded by excess hydrogen while improving retention characteristics of eDRAM. It is shown for the first time that anomalous degradation in TDDB for downsized MOSFET is caused by the compressive stress by STI and shows strong correlation to hydrogen processes. The optimization of hydrogen processes is indispensable for highly reliable system LSI in future generations.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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