AlGaN/GaN hemt的射频小信号和功率特性

The Fourth International Conference on Advanced Semiconductor Devices and Microsystem Pub Date : 2002-12-16 DOI:10.1109/ASDAM.2002.1088527

A. Fox, M. Marso, P. Javorka, P. Kordos

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引用次数: 2

摘要

s参数和负载拉力测量用于表征生长在蓝宝石或硅衬底上的AlGaN/GaN hemt的性能。从小信号数据可以得出，截止频率f/sub T/和f/sub max/随着指数的增加而增加，即随着栅极宽度的增加而增加，因为寄生对栅极总电容的贡献减小了。描述了负载-拉力测量的设置，并给出了7 GHz时的输出功率、增益和PAE的结果。

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RF small-signal and power characterization of AlGaN/GaN HEMTs

S-parameter and load pull measurements are used to characterize the properties of AlGaN/GaN HEMTs grown on sapphire or silicon substrates. From the small signal data it follows that the cut-off frequencies f/sub T/ and f/sub max/ increase with the number of fingers, i.e. with the gate width, because of reduced contribution of parasitics to the total gate capacitance. Load-pull measurement setup is described and results of the output power, gain and PAE at 7 GHz are shown.

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The Fourth International Conference on Advanced Semiconductor Devices and Microsystem

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