A Design of Low Power Full Seu Tolerance RHBD 10t Sram Cell

In aerospace electronic systems, SRAMs have been widely adopted and plays a major role in area, power, and delay. Space radiation affects electronic devices, service life, and efficiency. If an SRAM is affected by high radiation, the RHBD is helpful to overcome those radiation effects. The main objective of this project is to design novel RHBD 10T SRAM cell for improving power efficiency in the aerospace radiation environment while preserving the benefits of maximum SEU tolerance, small area, and high stability. The proposed SRAM cell will be implemented to tolerate soft errors. These soft errors are also known as SEU (single event upsets). This SRAM cell tolerates single event upsets of 0 to 1 and 1 to 0. Besides, proposed RHBD 10T SRAM is efficient in power when compared to the other RHBD SRAMs based on the switching activity.