P. Fernandez-Martínez, Athina Papadopoulou, S. Danzeca, G. Foucard, R. García Alía, M. Kastriotou, C. Cazzaniga, Giorgos Tsiligiannis, R. Gaillard
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This work compiles the outcome of several irradiation test campaigns, carried out with the aim of studying the susceptibility to hard Single Event Effects (SEE) of various commercial power MOSFET references. Proton, neutron and heavy ion irradiation were performed on the same set of MOSFET references, allowing for a comparison of their respective Single Event Burnout (SEB) and Single Event Gate Rupture (SEGR) sensitiveness under different energy and particle irradiation conditions.
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